Analysis of Polarization Charge on III-V Compound Materials for HEMT Devices
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Abstract
The paper presents the polarization charge analysis on III-V compound materials for HEMT Devices. The mathematical model for polarization charge analysis is derived from the experimental outcomes from the laboratory. The electron density in the channel of HEMT devices and the current versus polarization charges are demonstrated based on the numerical analysis. According to the numerical results, the results could be proved to fabricate the real devices in practical applications. The numerical analyses could be carried out by using MATLAB language.
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Myint Aye, M. N., Than Htike Aung, & Win Zaw Hein. (2019). Analysis of Polarization Charge on III-V Compound Materials for HEMT Devices. IJRDO - Journal of Electrical And Electronics Engineering, 5(7), 31-35. https://doi.org/10.53555/eee.v5i7.3127
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References
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[4] V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, “Band gap of hexagonal InN and InGaN alloys,” physica status solidi (b), vol. 234, no. 3, pp. 787–795, 2002.
[5] G. Bhuiyan, A. Hashimoto, and A. Yamamoto, “Indium nitride (InN): a review on growth, characterization, and properties,” Journal of Applied Physics, vol. 94, no. 5, pp. 2779–2808, 2003.
[6] K. S. A. Butcher and T. L. Tansley, “InN, latest development and a review of the band-gap controversy,” Superlattices and Microstructures, vol. 38, no. 1, pp. 1–37, 2005.
[7] J. Wu and W. Walukiewicz, “Band gaps of InN and group III nitride alloys,” Superlattices and Microstructures, vol. 34, no. 1, pp. 63–75, 2003.
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[9] Z. Yarar, “Transport and mobility properties of wurtzite InN and GaN,” physica status solidi (b), vol. 244, no. 10, pp. 3711–3718, 2007.